BLF278 Mosfet Transistor

by NXP

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.


  • High power gain
  • Easy power control
  • Good thermal stability
  • Gold metallization ensures excellent reliability.